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  2n2904 2N2904A 2n2905 2n2905a pnp silicon transistor description: the central semiconductor 2n2904, 2n2905 series types are pnp silicon transistors manufactured by the epitaxial planar process, designed for small signal, general purpose and switching applications. marking: full part number maximum ratings: (t a =25c unless otherwise noted) 2n2904 2N2904A symbol 2n2905 2n2905a units collector-base voltage v cbo 60 60 v collector-emitter voltage v ceo 40 60 v emitter-base voltage v ebo 5.0 v continuous collector current i c 0.6 a power dissipation p d 0.6 w power dissipation (t c =25c) p d 3.0 w operating and storage junction temperature t j , t stg -65 to +200 c 2n2904 2N2904A electrical characteristics: (t a =25c) 2n2905 2n2905a symbol test conditions min max min max units i cbo v cb =50v - 20 - 10 na i cev v ce =30v, veb=0.5v - - - 50 na bv cbo i c =10a 60 - 60 - v bv ceo i c =10ma 40 - 60 - v bv ebo i e =10a 5.0 - 5.0 - v v ce(sat) i c =150ma, i b =15ma - 0.4 - 0.4 v v ce(sat) i c =500ma, i b =50ma - 1.6 - 1.6 v v be(sat) i c =150ma, i b =15ma - 1.3 - 1.3 v v be(sat) i c =500ma, i b =50ma - 2.6 - 2.6 v 2n2904 2n2905 2N2904A 2n2905a min max min max h fe v ce =10v, i c =100a (2n2904, 2n2905) 20 - 35 - h fe v ce =10v, i c =100a (2N2904A, 2n2905a) 40 - 75 - h fe v ce =10v, i c =1.0ma (2n2904, 2n2905) 25 - 50 - h fe v ce =10v, i c =1.0ma (2N2904A, 2n2905a) 40 - 100 - h fe v ce =10v, i c =10ma (2n2904, 2n2905) 35 - 75 - h fe v ce =10v, i c =10ma (2N2904A, 2n2905a) 40 - 100 - h fe v ce =10v, i c =150ma 40 120 100 300 h fe v ce =10v, i c =500ma (2n2904, 2n2905) 20 - 30 - h fe v ce =10v, i c =500ma (2N2904A, 2n2905a) 40 - 50 - to-39 case r1 (11-june 2012) www.centralsemi.com
2n2904 2N2904A 2n2905 2n2905a pnp silicon transistor to-39 case - mechanical outline lead code: 1) emitter 2) base 3) collector marking: full part number electrical characteristics - continued: (t a =25c unless otherwise noted) symbol test conditions min max units f t v ce =20v, i c =50ma, f=100mhz 200 mhz c ob v cb =10v, f=100khz 8.0 pf t on v cc =30v, i c =150ma, i b =15ma 45 ns t off v cc =6.0v, i c =150ma, i b1 =i b2 =15ma 180 ns www.centralsemi.com r1 (11-june 2012)


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